UDC 621.3.082.782 DEPENDENCE OF THE TWO-DIMENSIONAL COMBINED DENSITY OF STATES ON THE ABSORBING PHOTON ENERGY IN GaAs/AlGaAs AT QUANTIZING MAGNETIC FIELD
Ключевые слова:
semiconductor, magneto-optical absorption coefficient; Landau levels; oscillations of the combined density of states; modeling; pressures; temperatures.Аннотация
Objective. The influence of the two-dimensional density of states on the oscillations of the transverse electrical conductivity in heterostructures with rectangular quantum wells is studied. A new analytical expression is derived for calculating the temperature dependence of the oscillations of the transverse electrical conductivity and magnetoresistance of a quantum well.
Methods. Oscillations of the electrical conductivity and magnetoresistance of a narrow-window quantum well with a nonparabolic dispersion law are studied. The proposed theory was used to study the results of experiments on a narrow-gap quantum well (InxGa1-xSb).
Results. A new analytical expression is derived for calculating the temperature dependence of the oscillations of the transverse electrical conductivity and magnetoresistance of a quantum well. A mechanism has been developed for the oscillation of the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential ) at low temperatures and weak magnetic fields.
